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Tuesday, May 12, 2020 | History

3 edition of Electrical characterization of 6H crystalline silicon carbide found in the catalog.

Electrical characterization of 6H crystalline silicon carbide

Electrical characterization of 6H crystalline silicon carbide

  • 213 Want to read
  • 4 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, D.C, Springfield, Va .
Written in English

    Subjects:
  • Activation energy.,
  • Carrier density (Solid state),
  • Doped crystals.,
  • Electrical resistivity.,
  • Hall effect.,
  • N-type semiconductors.,
  • P-type semiconductors.,
  • Silicon carbides.,
  • Temperature dependence.

  • Edition Notes

    StatementStephen E. Lempner.
    SeriesNASA contractor report -- NASA CR-197047.
    ContributionsUnited States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15412105M

    Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for. Electrical resistivity characterization of silicon carbide by various methods Conference Paper in Electrical Insulation, , Conference Record of the IEEE International Symposium on.

    Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The material consists of crystalline cubic silicon carbide nanomembranes grown on silicon wafers, released and then physically transferred to a final device substrate (e.g., polyimide). The experimental results demonstrate that SiC nanomembranes with thicknesses of nm do not experience the hydrolysis process (i.e., the etching rate is 0 nm Cited by: 5.

      Silicon carbide (SiC) is a material with outstanding physical and mechanical properties. It has high mechanical strength, high hardness, low density, high thermal conductivity, low thermal expansion coefficient, large band-gap, and excellent oxidation and corrosion resistances [1–3].It is a leading material for components and devices operating at high temperature, high power and under Cited by: 6H SiC.4 The potential for forming quality rectifying heterostructure contacts to SiC with non-crystalline semiconductor materials would appear to be good. Polycrystalline silicon (polysilicon) on 4H SiC is a candidate heterojunction for this type of rectifying contact.5 The formation of a polysilicon contact on SiC has several potential File Size: KB.


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Electrical characterization of 6H crystalline silicon carbide Download PDF EPUB FB2

ELECTRICAL CHARACTERIZATIONOF 6H CRYSTALLINE SILICON CARBIDE STEPHENE. LEMPNER ABSTRACT Crystalline silicon carbide (SIC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperatureFile Size: 2MB.

Get this from a library. Electrical characterization of 6H crystalline silicon carbide. [Stephen E Lempner; United States.

National Aeronautics and Space Administration.]. “Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November )“If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems Cited by: Electrical characterization of 6H crystalline silicon carbide.

By Stephen E. Lempner. Abstract. Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 Author: Stephen E.

Lempner. “Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November )“If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems /5(4).

Abstract. In this study, we report the first measurements of capacitance recovery times in 6H-SiC n-i-p-i-n diodes as a function of temperature, perimeter to area ratio, and pulse voltage, and show how this provides information on generation processes in the by: 2.

Journals & Books; Register Sign in. Sign in RegisterCited by: The growth rate and the surface properties of the 6H–SiC epitaxial layers are subsequently discussed with respect to variations of the propane and silane mass flow in the reaction chamber at °C.

A C/Si atomic ratio smaller than in the gas phase results in the deposition of silicon in addition to the silicon carbide layer [1,4].Cited by: Processing and Characterization of Silicon Carbide (6H- and 4H-SiC) Contacts for High Power and High Temperature Device Applications A dissertation submitted to Kungliga Tekniska Högskolan, Stockholm, Sweden, in partial fulfillment of the requirements for the degree of Teknisk Doktor (Ph.D.).

Sang-Kwon LeeCited by: 8. Characterization of Crystalline Silicon Carbide Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC p. Nitrogen Impurities in 3C-SiC Epilayers p.

Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiCp. Recrystallization and Electrical Properties of High-Temperature Implanted. “Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November )“If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems.

Gaseous Etching for the Characterization of Structural Defects in Silicon Carbide Single Crystals Conference Paper Materials Science Forum, vol. We have investigated the growth and electrical properties of crystalline Gd 2 O 3 grown on 6H-SiC() substrates by molecular beam epitaxy.

Initially, Gd 2 O 3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of []-oriented cubic bixbyite and monoclinic by: Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide Spellman L.M.

et al. () Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide. In: Yang C.Y., Rahman M.M., Harris G.L. (eds) Amorphous and Crystalline Silicon Carbide IV.

Springer Proceedings in Physics, vol Cited by: 1. Amorphous and Crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method.

Koga, Y. Fujikawa, Y. Ueda, T. Yamaguchi The reader will find this book valuable as a reference source, an up-to-date and in.

Even when lattice mismatch is not significant, for instance, 3C on 6H-SiC, the resulting 3C-SiC epilayers can still be of poor quality. If large, highly crystalline 3C-SiC crystals were available for use as substrates for 3C-SiC epitaxy, the expected improvement in epilayer quality should lead to Cited by:   Monocrystalline thin films, multilayered heterostructures and solid solutions of silicon carbide (SiC) and aluminum nitride (AlN) have been grown on alpha(6H) -SiC() substrates by gas-source molecular beam epitaxy.

Growth mechanisms, defect formation, donor and acceptor doping, metal-insulator-semiconductor diodes, pseudomorphic heterostructures and solid solutions in these Author: Richard Scott Kern. Microscopy of Semiconducting Materials Characterization of a porous silicon carbide layer produced on a 6H-SiC substrate: TEM (XHREM) and EDX studies Highresolution images of the pore crystalline-amorphous boundary show a gradual transition from a crystalline region to a completely amorphous one of the : C J D Hetherington, J L Hutchison, A A Lebedev, G N Mosina, N S Savkina, J Sloan, L M Sorokin.

Introduction. Silicon carbide (SiC) is a material with outstanding physical and mechanical properties. It has high mechanical strength, high hardness, low density, high thermal conductivity, low thermal expansion coefficient, large band-gap, and excellent oxidation and corrosion resistances [].It is a leading material for components and devices operating at high temperature, high power and Cited by: Sintering conditions, sintered density, and electrical properties of silicon carbide ceramics sintered with gadolinia and by:.

From to he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene.Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of contributions to this volume report recent developments and trends in the field.

The purpose is to make available the current stateBrand: Springer-Verlag Berlin Heidelberg.AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate By H. Shimizu, K. Naito, and S. Ishio (With 7 Figures) Part П Characterization of Crystalline Silicon Carbide Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC By W.

Suttrop, G. Pensl, W.J. Choyke, A. Dornen, S. Leibenzeder,Cited by: